Display device

ABSTRACT

A display device includes a display part that displays an image, a touch part on the display part, the touch part including a first conductive layer on the display part, a lower inorganic layer on the first conductive layer, an upper inorganic layer covering the lower inorganic layer and a second conductive layer on the upper inorganic layer. The upper inorganic layer includes substantially a same material as the lower inorganic layer. The upper inorganic layer has a hydrogen atomic percent less than a hydrogen atomic percent of the lower inorganic layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. patent application Ser. No.15/889,340, filed Feb. 6, 2018, which is a Continuation of U.S. patentapplication Ser. No. 14/855,830, filed Sep. 16, 2015, which issued asU.S. Pat. No. 9,927,896, and claims priority from and the benefit ofKorean Patent Application No. 10-2014-0136858, filed Oct. 10, 2014, eachof which is hereby incorporated by reference for all purposes as iffully set forth herein.

BACKGROUND 1. Field

Embodiments relate to a display device and a method of manufacturing thesame.

2. Description of the Related Art

In recent years, a display device generally includes a display part anda touch part. The touch part obtains coordinate information about aposition at which a touch event occurs and provides information to thedisplay part. The display part displays an image corresponding to theinformation provided from the touch part.

SUMMARY

Embodiments are directed to a display device including a display partthat displays an image, a touch part on the display part, the touch partincluding a first conductive layer on the display part, a lowerinorganic layer on the first conductive layer, an upper inorganic layercovering the lower inorganic layer and a second conductive layer on theupper inorganic layer. The upper inorganic layer includes substantiallya same material as the lower inorganic layer. The upper inorganic layerhas a hydrogen atomic percent less than a hydrogen atomic percent of thelower inorganic layer.

The hydrogen atomic percent of the upper inorganic layer may be greaterthan 0 and less than or equal to about 20.

The upper inorganic layer may include silicon nitride.

The second conductive layer may include copper.

The lower inorganic layer may have a breakdown voltage equal to orgreater than about 5 MV/cm.

The lower inorganic layer may have a thickness greater than a thicknessof the upper inorganic layer.

The display part may include a base substrate, an organic light emittingdiode on the base substrate, and a thin film encapsulation layer on thebase substrate, the thin film encapsulation layer covering the organiclight emitting diode and including an inorganic material. The firstconductive layer is directly on the thin film encapsulation layer.

The first conductive layer may include first touch electrodes on thethin film encapsulation layer, the first touch electrodes extending in afirst direction and being arranged in a second direction crossing thefirst direction. The second conductive layer may include second touchelectrodes respectively crossing the first touch electrodes andinsulated from the first touch electrodes by the upper inorganic layerand the lower inorganic layer.

Each of the first touch electrodes may include first sensing partsarranged in the first direction and spaced apart from each other andfirst connection parts, each of the first connection parts being betweenthe first sensing parts to connect two first sensing parts adjacent toeach other among the first sensing parts. Each of the second touchelectrodes may include second sensing parts arranged in the seconddirection and spaced apart from each other, and second connection parts,each of the second connection parts being between the second sensingparts to connect two second sensing parts adjacent to each other amongthe second sensing parts.

The first conductive layer may include first sensing parts on the thinfilm encapsulation layer, the first sensing parts being arranged in afirst direction and spaced apart from each other, connection parts onthe thin film encapsulation layer and extending in the first direction,each connection part connecting two first sensing parts adjacent to eachother among the first sensing parts, and second sensing parts on thethin film encapsulation layer, the second sensing parts being arrangedin a second direction crossing the first direction, spaced apart fromeach other, and insulated from the first sensing parts and theconnection parts. The second conductive layer may include bridgeelectrodes on the upper and lower inorganic layers, each of the bridgeelectrodes connecting two second sensing parts adjacent to each otheramong the second sensing parts through a thru-hole defined through theupper inorganic layer and the lower inorganic layer.

Embodiments are also directed to a method of manufacturing a displaydevice including providing a display panel, forming a first electrodelayer on the display panel, forming an insulating layer includingsilicon nitride on the first electrode layer, and forming a secondconductive layer on the insulating layer. Forming the insulating layermay include supplying a first gas on the first conductive layer to forma lower insulating layer and supplying a second gas on the lowerinsulating layer to form an upper insulating layer. The first gas mayinclude silane, nitrogen, ammonia, and hydrogen, and the second gas mayinclude silane, nitrogen, and hydrogen.

The second gas may be obtained by substantially removing ammonia fromthe first gas.

The lower insulating layer may have a hydrogen atomic percent exceedingabout 20, the hydrogen atomic percent of the lower insulating layerbeing greater than the hydrogen atomic percent of the upper insulatinglayer. The upper insulating layer may have a hydrogen atomic percentthat is greater than 0 and equal to or less than about 20.

Forming the insulating layer may be performed at a temperature less thanor equal to about 85° C.

An amount of hydrogen in the first gas may be greater than about threetimes an amount of nitrogen in the second gas.

An amount of silane in the second gas is less than an amount of silanein the first gas.

The display panel may include a base substrate, an organic lightemitting diode on the base substrate, and a thin film encapsulationlayer covering the organic light emitting diode, the first conductivelayer being formed directly on the thin film encapsulation layer.

Forming the second conductive layer may be performed by a wet etchingprocess using an etching solution. An etching rate of the upperinsulating layer against may be about 3 Å/s.

Forming the first conductive layer may include forming first electrodeson the thin film encapsulation layer such that the first electrodesextend in a first direction and are arranged in a second directioncrossing the first direction. Forming the second conductive layer mayinclude forming second electrodes on the upper insulating layer to crossthe first electrodes.

The first conductive layer may include first electrodes on the thin filmencapsulation layer, the first electrodes extending in a first directionand being arranged in a second direction crossing the first direction,and second electrodes being between the first electrodes, the secondelectrodes being spaced apart from each other in the second direction.Forming the second conductive layer may include forming thru-holesthrough the upper insulating layer and the lower insulating layer, andforming connection electrodes on the upper insulating layer, theconnection electrodes connecting the second electrodes through thethru-holes.

BRIEF DESCRIPTION OF THE DRAWINGS

Features will become apparent to those of skill in the art by describingin detail exemplary embodiments with reference to the attached drawingsin which:

FIG. 1 illustrates an assembled perspective view showing a displaydevice according to an exemplary embodiment;

FIG. 2 illustrates an exploded perspective view showing the displaydevice shown in FIG. 1;

FIG. 3A illustrates a plan view showing a display part according to anexemplary embodiment;

FIG. 3B illustrates a cross-sectional view showing a display partaccording to an exemplary embodiment;

FIG. 4A illustrates a plan view showing a portion of a touch partaccording to an exemplary embodiment;

FIG. 4B illustrates a plan view showing a portion of a touch partaccording to an exemplary embodiment;

FIG. 4C illustrates a cross-sectional view taken along a line I-I′ ofFIG. 4B;

FIG. 5A illustrates a plan view showing a portion of a touch partaccording to another exemplary embodiment;

FIG. 5B illustrates a plan view showing a portion of a touch partaccording to an exemplary embodiment;

FIG. 5C illustrates a cross-sectional view taken along a line II-II′ ofFIG. 5B;

FIG. 6 illustrates a flowchart showing a method of manufacturing adisplay device according to an exemplary embodiment; and

FIG. 7 illustrates a flowchart showing a portion of the manufacturingmethod shown in FIG. 6.

DETAILED DESCRIPTION

Example embodiments will now be described more fully hereinafter withreference to the accompanying drawings; however, they may be embodied indifferent forms and should not be construed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey exemplary implementations to those skilled in the art.

In the drawing figures, the dimensions of layers and regions may beexaggerated for clarity of illustration. It will also be understood thatwhen a layer or element is referred to as being “on” another layer orsubstrate, it can be directly on the other layer or substrate, orintervening layers may also be present. Further, it will be understoodthat when a layer is referred to as being “between” two layers, it canbe the only layer between the two layers, or one or more interveninglayers may also be present. Like reference numerals refer to likeelements throughout.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, components, regions, layersand/or sections, these elements, components, regions, layers and/orsections should not be limited by these terms. These terms are only usedto distinguish one element, component, region, layer or section fromanother region, layer or section. Thus, a first element, component,region, layer or section discussed below could be termed a secondelement, component, region, layer or section without departing from theteachings of the present invention.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the relevant art. It will be further understoodthat terms, such as those defined in commonly used dictionaries, shouldbe interpreted as having a meaning that is consistent with their meaningin the context of the relevant art and will not be interpreted in anidealized or overly formal sense unless expressly so defined herein.

FIG. 1 illustrates an assembled perspective view showing a displaydevice DA according to an exemplary embodiment and FIG. 2 illustrates anexploded perspective view showing the display device shown in FIG. 1.

Referring to FIGS. 1 and 2, the display device DA may include a displayarea AR and a non-display area BR, which are disposed on a plane surfacedefined by a first direction DR1 and a second direction DR2 crossing thefirst direction DR1.

The display area AR is an area in which an image IM is displayed. A usermay obtain information from the image IM displayed through the displayarea AR.

The non-display area BR may surround an edge of the display area AR. Thenon-display area BR may define the display area AR. The image IM is notdisplayed in the non-display area BR. An external input device, such asa button, an input port, etc., may be further disposed in thenon-display area BR.

The display device DA may include an upper protective member 100, alower protective member 200, and a touch screen panel TSP. The upper andlower protective members 100 and 200 may define an outer shape of thedisplay device DA.

The upper and lower protective members 100 and 200 may be coupled toeach other to protect the touch screen panel TSP. Each of the upper andlower protective members 100 and 200 may be a plastic substrate, a metalsubstrate, a glass substrate, or a film.

The upper protective member 100 may cover the touch screen panel TSP.The upper protective member 100 may include a transmission area 100-ARand a non-transmission area 100-BR.

The transmission area 100-AR may be in an overlapping relationship withthe display area AR. The transmission area 100-AR may transmit lightsuch that the image IM is perceived by the user. The user may perceivethe image IM through the transmission area 100-AR.

The transmission area 100-AR may be defined by an opening portion or byusing a transparent material through which the light transmits. Thetransmission area 100-AR may transmit the image IM and may protect theinside of the display device DA.

The non-transmission area 100-BR may surround the transmission area100-AR. The non-transmission area 100-BR may have a frame shape. Thenon-transmission area 100-BR may block the light provided from the touchscreen panel TSP. The non-transmission area 100-BR may prevent the lightfrom traveling to the non-display area BR.

The lower protective member 200 may include a plane surfacesubstantially parallel to the upper protective member 100 and a sidewallbent from the plane surface to an upper direction DR3 (hereinafter,referred to as a third direction). The sidewall may be bent from sidesdefining the plane surface to surround an edge of the plane surface.

The plane surface and the sidewall may define a predetermined innerspace. The lower protective member 200 may accommodate the touch screenpanel TSP in the inner space thereof. The sidewall may be coupled to theedge of the upper protective member 100.

The touch screen panel TSP may include a display part 300 and a touchpart 400. The display part 300 and the touch part 400 may besequentially stacked in the third direction DR3.

The display part 300 may generate and display the image IM. The displaypart 300 may be, for example, a display panel that displays the image IMin response to a voltage source applied thereto.

A suitable display panel, such as a liquid crystal display panel, anorganic light emitting display panel, an electrophoretic display panel,an electrowetting display panel, etc., may be used as the display part300. For convenience of description, the organic light emitting displaypanel will be described as the display part 300 in the present exemplaryembodiment.

When the organic light emitting display panel is used as the displaypart 300, the display part 300 self-emits light without using a separatelight source. Accordingly, the display device DA may be slim andlightweight. The display device DA including the display part 300 may beapplied to a mobile device, a portable device, or a flexible device thatmay be easily carried in a pocket.

The touch part 400 may sense external touch information and apply thesensed external touch information to the display device DA as an inputsignal. The external touch information may be produced by the touch ofthe user, which may occur on the upper protective member 100. The touchpart 400 may be directly disposed on the display part 300.

The touch part 400 may include a first conductive layer 410, aninsulating layer 420, a second conductive layer 430, and an upper layer440. The first conductive layer 410, the insulating layer 420, thesecond conductive layer 430, and the upper layer 440 may be sequentiallystacked in the third direction DR3.

The first conductive layer 410 may include a conductive material. Forinstance, the first conductive layer 410 may include at least one of ametal material, a conductive oxide, a metal oxide, a conductive polymer,and an alloy thereof.

The second conductive layer 430 may include the same material as thefirst conductive layer 410. As an example, the second conductive layer430 may include copper.

Each of the first and second conductive layers 410 and 430 may include aplurality of conductive patterns. The conductive patterns of the firstconductive layer 410 may be insulated from the conductive patterns ofthe second conductive layer 430 while crossing the conductive patternsof the second conductive layer 430. The conductive patterns may havevarious shapes.

The insulating layer 420 may insulate the first conductive layer 410from the second conductive layer 430. The insulating layer 420 mayinclude an inorganic material. For instance, the insulating layer 420may include at least one of silicon nitride and silicon oxide. Forexample, the insulating layer 420 may include silicon nitride.

The inorganic material may include inorganic molecules containinghydrogen atoms in various ratios. For instance, the silicon nitride mayinclude hydrogen atoms in addition to silicon atoms and nitrogen atoms.The ratio of the hydrogen atoms combined with the silicon atoms may bein various combinations.

The insulating layer 420 may have a multi-layer structure. In thepresent exemplary embodiment, the insulating layer 420 may be configuredto include at least two layers stacked one on another. The two layersmay include substantially the same inorganic material.

The upper layer 440 may be a plastic substrate, a glass substrate, or afilm. In some implementations, the upper layer 440 may be an opticalfilm, e.g., a polarizing plate. In some implementations, the upper layer440 may be omitted from the touch part 400.

FIG. 3A illustrates a plan view showing a display part according to anexemplary embodiment. FIG. 3B is a cross-sectional view showing adisplay part according to an exemplary embodiment. In FIGS. 3A and 3B,the same reference numerals denote the same elements as in FIGS. 1 and2, and thus detailed descriptions of the same elements will not berepeated.

Referring to FIG. 3A, the display part 300 may include a pixel area300-AR and a peripheral area 300-BR, which are disposed on a planesurface defined by the first and second directions DR1 and DR2.

The pixel area 300-AR may display the image. The pixel area 300-AR maybe overlapped with the display area AR. The peripheral area 300-BR maysurround the pixel area 300-AR.

The display part 300 may include a plurality of signal lines SGL, a gatedriving circuit GDC, and a plurality of pixels PX. The signal lines SGLmay be configured to include a plurality of gate lines GL and aplurality of data lines DL.

The gate lines GL may extend in the first direction DR1 and may bearranged in the second direction DR2. The data lines DL may be insulatedfrom the gate lines GL while crossing the gate lines GL. The gate linesGL and the data lines DL may be disposed in the pixel area 300-AR andthe peripheral area 300-BR.

The gate driving circuit GDC may be disposed in the peripheral area300-BR. The gate driving circuit GDC may be connected to the gate linesGL. The gate driving circuit GDC may sequentially apply scan signals tothe gate lines GL.

The gate driving circuit GDC may be provided in various ways. Forexample, the gate driving circuit GDC may be mounted on the display part300 by a chip-on-glass (COG) method or a chip-on-film (COF) method. Thegate driving circuit GDC may be separately prepared, and then coupled tothe display part 300.

The data lines DL may be disposed in the pixel area 300-AR and mayextend into the peripheral area 300-BR. Data pads DL-P may be disposedat one ends of the data lines DL in the peripheral area 300-BR. The datalines DL may receive data signals through the data pads DL-P.

The display part 300 may be connected to a main circuit FPC-300. In FIG.3A, the main circuit FPC-300 is indicated by a dotted line.

The main circuit FPC-300 may include a data driving circuit. The maincircuit FPC-300 may be connected to the data pads DL-P and may apply thedata signals to the data lines DL.

In addition, the main circuit FPC-300 may be connected to a gate padGL-P. The gate pad GL-P may be disposed in the display part 300 to beadjacent to the data pads DL-P.

The gate pad GL-P may be connected to the gate driving circuit GDC. Themain circuit FPC-300 may apply a control signal to the gate drivingcircuit through the gate pad GL-P.

The pixels PX may be disposed in the pixel area 300-AR. Each of thepixels PX may be connected to a corresponding gate line of the gatelines GL and a corresponding data line of the data lines DL.

The pixels PX may be operated in response to the scan signals providedthrough the gate lines GL to generate the image corresponding to thedata signals provided through the data lines DL.

FIG. 3B illustrates the cross-sectional view of the display part 300together with one pixel PX. The display part 300 may include a basesubstrate 310, a device layer 320, a display layer 330, and a thin filmencapsulation layer 340. The pixel PX may include a thin film transistorTFT and an organic light emitting diode OLED.

The base substrate 310 may be a glass substrate, a plastic substrate, ora film. The device layer 320 may be disposed on the base substrate 310.The device layer 320 may include the thin film transistor TFT, a firstinsulating layer ILL and a second insulating layer IL2.

The thin film transistor TFT may include a control electrode CE, asemiconductor layer AL, an input electrode IE, and an output electrodeOE. The control electrode CE may be disposed on the base substrate 310.The control electrode CE may be branched from the gate linecorresponding to the pixel PX.

The first insulating layer IL1 may be disposed on the base substrate 310to cover the control electrode CE. The first insulating layer IL1 maycover the control electrode CE and the gate lines. The first insulatinglayer IL1 may include at least one of inorganic and organic materials.The first insulating layer IL1 may have a single-layer or multi-layerstructure.

The semiconductor layer AL may be disposed on the first insulating layerIL1. The semiconductor layer AL may be in an overlapping relationshipwith the control electrode CE. The semiconductor layer AL may includeamorphous silicon, polysilicon, or metal oxide semiconductor.

The input electrode IE and the output electrode OE may be disposed onthe first insulating layer IL1 and spaced apart from each other. Thedata lines DL may be disposed on the first insulating layer IL1. Theinput electrode IE may be branched from the data line corresponding tothe pixel PX.

Each of the input electrode IE and the output electrode OE may be in anoverlapping relationship with a portion of the semiconductor layer AL.The semiconductor layer AL may further include an ohmic contact layerdisposed in areas respectively overlapped with the input electrode IEand the output electrode OE.

The input electrode IE and the output electrode OE may be spaced apartfrom each other to expose a portion of the semiconductor layer AL thatcorresponds to a distance between the input electrode IE and the outputelectrode OE.

The second insulating layer IL2 may be disposed on the first insulatinglayer IL1 to cover the thin film transistor TFT. The second insulatinglayer IL2 may electrically insulate the thin film transistor TFT fromother elements.

The second insulating layer IL2 may include at least one of inorganicand organic materials. The second insulating layer IL2 may have asingle- or multi-layer structure.

FIG. 3B illustrates a thin film transistor TFT having a bottom-gatestructure. In some implementations, the thin film transistor TFT mayhave a top-gate structure, a dual gate structure, or a planar structure.

The display layer 330 may be disposed on the device layer 320. Thedisplay layer 330 may include the organic light emitting diode OLED anda pixel definition layer PDL. The organic light emitting diode OLED mayinclude a first electrode ED1, an organic layer EL, and a secondelectrode ED2.

The first electrode ED1 may be disposed on the second insulating layerIL2. The first electrode ED1 may be connected to the output electrode OEthrough a thru-hole TH formed through the second insulating layer IL2.

The first electrode ED1 may be a transmissive electrode, a transflectiveelectrode, or a reflective electrode. For instance, when the firstelectrode ED1 is a transmissive electrode, the first electrode ED1 mayinclude a transparent metal oxide, e.g., indium tin oxide (ITO), indiumzinc oxide (IZO), indium tin zinc oxide (ITZO), etc.

When the first electrode ED1 is a transflective or reflective electrode,the first electrode ED1 may include silver (Ag), magnesium (Mg),aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni),neodymium (Nd), iridium (Ir), chromium (Cr), or mixtures thereof.

The first electrode ED1 may have a single-layer structure or amulti-layer structure of layers. For instance, the first electrode ED1may have a single-layer structure of indium tin oxide (ITO), silver(Ag), or a metal mixture, a double-layer structure of indium tinoxide/magnesium (ITO/Mg), a double-layer structure of indium tinoxide/magnesium fluoride (ITO/MgF), or a triple-layer structure ofindium tin oxide/silver/indium tin oxide (ITO/Ag/ITO).

The pixel definition layer PDL may be disposed on the second insulatinglayer IL2. The pixel definition layer PDL may include at least one of anorganic material and an inorganic material. The pixel definition layerPDL may expose at least a portion of the first electrode ED1.

The organic layer EL may be disposed on the first electrode ED1. Theorganic layer EL may cover the exposed portion of the first electrodeED1 through the pixel definition layer PDL. The organic layer EL mayinclude a light emitting layer that generates the light in response toan electrical signal applied thereto.

The light emitting layer may include materials respectively emittinglights of red, green, and blue colors and may include a fluorescentmaterial or phosphor material.

The organic layer EL may have a single-layer structure or a multi-layerstructure. When the organic layer EL has the multi-layer structure, alight efficiency of the organic light emitting diode OLED may beimproved.

The second electrode ED2 may be disposed on the organic layer EL and thepixel definition layer PDL. The second electrode ED2 may be disposedover the entire surface of the display part 300.

The second electrode ED2 may be a transmissive electrode, atransflective electrode, or a reflective electrode. For instance, thesecond electrode ED2 may include lithium (Li), calcium (Ca), lithiumfluoride/calcium (LiF/Ca), lithium fluoride/aluminum (LiF/Al), aluminum(Al), magnesium (Mg), silver (Ag), or compounds or mixtures thereof.

The second electrode ED2 may include silver (Ag), magnesium (Mg),aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni),neodymium (Nd), iridium (Ir), chromium (Cr), or mixtures thereof, or mayinclude a transparent conductive oxide, such as indium tin oxide (ITO),indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO),etc.

The first and second electrodes ED1 and ED2 may include differentmaterials according to a light emitting type of the organic lightemitting diode OLED. For instance, when the organic light emitting diodeOLED is a front surface light emitting type, the first electrode ED1 maybe the reflective electrode and the second electrode ED2 may be thetransmissive or transflective electrode. On the other hand, when theorganic light emitting diode OLED is a rear surface light emitting type,the first electrode EL1 may be the transmissive or transflectiveelectrode and the second electrode ED2 may be the reflective electrode.

The thin film encapsulation layer 340 may be disposed on the displaylayer 330. The thin film encapsulation layer 340 may encapsulate theorganic light emitting diode OLED. The thin film encapsulation layer 340may protect the organic light emitting diode OLED from moisture andoxygen.

The thin film encapsulation layer 340 may include a transparentinsulating material. The thin film encapsulation layer 340 may includeat least one of organic and inorganic materials. The thin filmencapsulation layer 340 may further include a polarizing plate.

The thin film encapsulation layer 340 may have a single- or multi-layerstructure. When the thin film encapsulation layer 340 has themulti-layer structure of layers, each layer may have a thickness ofabout 1 nm to about 50 nm. The display part 300 may be encapsulated bythe thin film encapsulation layer 340, and thus, the display device maybe slim.

FIG. 4A illustrates a plan view showing a portion of a touch partaccording to an exemplary embodiment, FIG. 4B is a plan view showing aportion of a touch part according to an exemplary embodiment, and FIG.4C is a cross-sectional view taken along a line I-I′ of FIG. 4B.

Hereinafter, the touch part 400 will be described in detail withreference to FIGS. 4A to 4C. In FIGS. 4A to 4C, the same referencenumerals denote the same elements in FIGS. 1 to 3B, and thus detaileddescriptions of the same elements will not be repeated. In FIGS. 4A to4C, the upper layer 440 (refer to FIG. 2), which may be omitted, is notshown.

Referring to FIG. 4A, the touch part 400 may be directly disposed on thedisplay part 300. The first conductive layer 410 may be disposed on thethin film encapsulation layer 340.

The first conductive layer 410 may include a plurality of conductivepatterns. The conductive patterns may include first touch electrodes 410a, 410 b, 410 c, and 410 d extending in the first direction DR1 andarranged in the second direction DR2.

Each of the first touch electrodes 410 a, 410 b, 410 c, and 410 d mayinclude first sensing parts TP1 and first connection parts CP1. Thefirst sensing parts TP1 may be arranged in the second direction DR2 andspaced apart from each other in the first direction DR1. The firstconnection parts CP1 may be disposed between the first sensing partsTP1. Each of the first connection parts CP1 may connect two firstsensing parts adjacent to each other.

The conductive layer 410 may further include outer wires WP1. One end ofthe outer wires WP1 may be connected to the first touch electrodes 410a, 410 b, 410 c, and 410 d.

Lower pads PDD may be defined at the other end of the outer wires WP1.The lower pads PDD may be connected to first pads PD1 described later.

Referring to FIG. 4B, the insulating layer 420 may be disposed on thefirst conductive layer 410. The insulating layer 420 may cover the firstconductive layer 410. The second conductive layer 430 may be disposed onthe insulating layer 420. The insulating layer 420 may insulate thefirst conductive layer 410 from the second conductive layer 430.

The second conductive layer 430 may include a plurality of conductivepatterns. The conductive patterns may include second touch electrodes430 a, 430 b, and 430 c extending in the second direction DR2 andarranged in the first direction DR1.

The second touch electrodes 430 a, 430 b, and 430 c have substantially asimilar structure as the first touch electrodes 410 a, 410 b, 410 c, and410 d. For example, the second touch electrodes 430 a, 430 b, and 430 cmay be configured to include second sensing parts TP2 and secondconnection parts CP2.

The second sensing parts TP2 may be arranged in the first direction DR1and spaced apart from each other. The second sensing parts TP2 may bedisposed between the first sensing parts TP1, without overlapping thefirst sensing parts TP1, when viewed in a plan view.

The second connection parts CP2 may be disposed between the secondsensing parts TP2. Each of the second connection parts CP2 may connecttwo second sensing parts TP2 adjacent to each other. The secondconnection parts CP2 may be disposed to cross the first connection partsCP1. The second connection parts CP2 may partially overlap the firstconnection parts CP1.

The second conductive layer 430 further includes outer wires WP2. Oneend of the outer wires WP2 may be respectively connected to the secondtouch electrodes 430 a, 430 b, and 430 c. The other end of the outerwires WP2 may extend into a pad area PA.

The first pads PD1 and second pads PD2 may be disposed in the pad areaPA. The first pads PD1 may be connected to the outer wires WP1 of thefirst conductive layer 410 and the second pads PD2 may be connected tothe outer wires WP2 of the second conductive layer 420.

Thru-holes 420-TH may be formed through the insulating layer 420. Thethru-holes 420-TH may overlap with the lower pads PDD. The first padsPD1 may be electrically connected to the lower pads PDD through thethru-holes 420-TH.

A touch driver may apply sensing signals to the first touch electrodes410 a, 410 b, 410 c, and 410 d and the second touch electrodes 430 a,430 b, and 430 c. The touch driver includes a signal applier and asignal processor.

The signal applier may sequentially apply the sensing signals to thefirst touch electrodes 410 a, 410 b, 410 c, and 410 d or the secondtouch electrodes 430 a, 430 b, and 430 c. The signal processor may sensea delay value of the sensing signals to sense a touch coordinate. Thetouch driver may be directly mounted on the insulating layer 420 ormounted on a separate circuit board for the touch event.

Referring to FIG. 4C, the insulating layer 420 may include a firstinsulating layer 421 and a second insulating layer 422. The firstinsulating layer 421 (hereinafter, referred to as a lower insulatinglayer) may be disposed at a lower portion of the insulating layer 420.The second insulating layer 422 (hereinafter, referred to as an upperinsulating layer) may be disposed at an upper portion of the insulatinglayer 420.

In the present exemplary embodiment, the lower insulating layer 421 mayprovide the electrical durability of the insulating layer 420 and theupper insulating layer 422 may provide the physical durability of theinsulating layer 420. For example, the lower insulating layer 421 mayimprove a breakdown voltage of the insulating layer 420, and the upperinsulating layer 422 may reduce an etching rate of the insulating layer420 to improve a resistance of the insulating layer 420 against anetching solution.

In general, as an amount of hydrogen atoms in a layer becomes larger,the etching rate of the layer increases. When the layer has a highetching rate with respect to the etching solution, the layer may bevulnerable to the etching solution. When the layer has a low etchingrate with respect to the etching solution, the layer may be stable tothe etching solution. Accordingly, the etching rate of the insulatinglayer 420 may exert a strong influence on the insulating layer 420 whenthe insulating layer 420 is etched.

The ratio of hydrogen atoms in the upper insulating layer 422 may belower than that of hydrogen atoms in the lower insulating layer 421.Therefore, the upper insulating layer 422 may have a lower etching ratethan the lower insulating layer 421.

In the present exemplary embodiment, silicon nitride may be representedby the formula SiNx indicating that the nitrogen atoms may vary.Accordingly, the ratio of hydrogen atoms to silicon atoms may also vary.For example, silicon nitride may be a compound obtained by combiningnitrogen atoms with silicon atoms, but hydrogen atoms may be added inaccordance with the number of nitrogen atoms combined with hydrogenatoms.

In the present exemplary embodiment, a ratio of hydrogen atoms containedin each layer may be represented by an atomic percent (at %). The term“atomic percent” refers to a percentage of hydrogen atoms with respectto various atoms contained in each layer.

In the display device according to the present exemplary embodiment, theinsulating layer in which the atomic percent of hydrogen atoms is lowerthan that of the lower insulating layer 421 is employed as the upperinsulating layer 422. Thus, the display device may prevent the lowerinsulating layer 421 from being damaged during the etching process.

In addition, a breakdown intensity of a specific layer is influenced bya layer density of the specific layer. The lower insulating layer 421may have a relatively high layer density compared to the upperinsulating layer 422.

Table 1 below represents the lower and upper insulating layers 421 and422 compared to comparison examples. The insulating layer 420 will bedescribed in detail with reference to the following Table 1.

TABLE 1 Atomic percent Breakdown of hydrogen Etching rate voltage (at %)(Å/s) (MV/cm) First comparison 24.0 2.5 6.8 example Second comparison36.8 316.2 2.9 example Lower insulating layer 31.0 61.5 5.0 Upperinsulating layer 19.6 1.8 2.4

The first comparison example represents a silicon nitride layer formedat a high temperature of about 370° C., the second comparison examplerepresents a silicon nitride layer formed at a low temperature of about70° C., the lower insulating layer 421 includes silicon nitride formedat a low temperature of about 70° C., and the upper insulating layer 422includes silicon nitride formed at a low temperature of about 70° C.

In detail, the lower insulating layer 421 is formed under conditionsthat a power is about 900 W, a distance between a deposition source anda target substrate is about 500 mils, and a pressure is about 1,000mtorr. In this case, a deposition gas used to deposit the lowerinsulating layer 421 includes a nitrogen gas (N₂) of about 1,500 sccm(standard cubic centimeter per minute), an ammonia gas (NH₃) of about500 sccm, a silane gas (SiH₄) of about 150 sccm, and a hydrogen gas (H₂)of about 4500 sccm.

The upper insulating layer 422 is formed under conditions that a poweris about 500 W, a distance between a deposition source and a targetsubstrate is about 1,000 mils, and a pressure is about 500 mtorr. Inthis case, a deposition gas used to deposit the upper insulating layer422 includes the nitrogen gas (N₂) of about 3000 sccm, the silane gas(SiH₄) of about 50 sccm, and the hydrogen gas (H₂) of about 4500 sccm.The deposition gas used to deposit the upper insulating layer 422 doesnot include the ammonia gas (NH₃).

As described above, the lower insulating layer 421 and the upperinsulating layer 422 have a different atomic percent of hydrogen. Theetching rate shown in Table 1 represents an etching rate against anetching solution that reacts with copper.

In general, the silicon nitride layer formed at the high temperature hassuperior stability with respect to the etching solution, and the siliconnitride layer formed at the low temperature has a tendency to bevulnerable against the etching solution. As shown in Table 1, the firstcomparison example has relatively low etching rate of about 2.5 Å/s(angstrom per second) with respect to the etching solution.

The second comparison example has relatively high etching rate of about316.2 Å/s with respect to the etching solution. When compared to thefirst comparison example, the second comparison example may be easilydamaged during the etching process of etching copper, since the secondcomparison example easily reacts with the etching solution.

The upper insulating layer 422 according to the present exemplaryembodiment includes about 19.6 at % of hydrogen atoms. Accordingly, theetching rate of the upper insulating layer 422 is about 1.8 Å/s, whichis similar to that of the first comparison example. Therefore, the upperinsulating layer 422 has superior stability with respect to the etchingsolution.

In detail, the amount of hydrogen atoms of the upper insulating layer422 is in a range exceeding about 0 at % and equal to or smaller thanabout 20 at %. Therefore, the upper insulating layer 422 has the etchingrate equal to or smaller than about 3 Å/s with respect to the etchingsolution that reacts with copper. The etching rate of the insulatinglayer 420 according to the present exemplary embodiment may becontrolled by adjusting the atomic percent of hydrogen atoms. Thus, thestability of the insulating layer 420 may be improved.

Referring to Table 1, the lower insulating layer 421 has the etchingrate of about 61.5 Å/s, which is lower than that of the secondcomparison example, but higher than that of the first comparisonexample. Thus, the lower insulating layer 421 may be slightly damaged bythe etching solution.

The insulating layer 420 according to embodiments has the double-layerstructure including the upper insulating layer 422 having relatively lowetching rate covering the lower insulating layer 421. The secondconductive layer 430 may be disposed on the upper insulating layer 422,Accordingly, the lower insulating layer 421 may be protected by theupper insulating layer 422. The second conducive layer 430 may be formedwithout damaging the insulating layer 420. Thus, the reliability of theinsulating layer 420 may be improved when the display device ismanufactured.

The silicon nitride layer formed at the high temperature may have arelatively high breakdown voltage compared to that of the siliconnitride layer formed at the low temperature. The term “breakdownvoltage” refers to a maximum voltage in which Ohm's law, e.g., a currentflowing through a layer is in proportion to a voltage applied to thelayer, is maintained.

When the voltage higher than the breakdown voltage is applied to thelayer, Ohm's law is ignored and an avalanche phenomenon, in which anextremely large current flows through the conductor, occurs in thelayer. Therefore, as the breakdown voltage of the layer becomes higher,the electrical durability of the layer becomes higher against thevoltage.

As shown in Table 1, the breakdown voltage of the lower insulating layer421 is about 5.0 MV/cm (megavolts per centimeter), which is similar tothat of the first comparison example. The lower insulating layer 421 hasrelatively high breakdown voltage compared to the second comparisonexample and the upper insulating layer 422, each having the breakdownvoltage of about 2 MV/cm.

Although not shown in Table 1, the lower insulating layer 421 has arelatively higher density than t the upper insulating layer 422. Thelower insulating layer 421 may be more densely deposited than the upperinsulating layer 422 by controlling the deposition gas used in theprocess of depositing the lower insulating layer 421.

In general, as the density of the layer becomes higher, inner defects ofthe layer become smaller and the breakdown voltage becomes higher.Therefore, the lower insulating layer 421 has the breakdown voltagehigher than that of the upper insulating layer 422. The lower insulatinglayer 421 has the breakdown voltage of about 5 MV/cm.

The lower insulating layer 421 according to the present exemplaryembodiment has a thickness greater than that of the upper insulatinglayer 422. The insulating layer 420 may include the lower insulatinglayer 421 having the thickness greater than that of the upper insulatinglayer 422. Accordingly, the insulating layer 420 may have a highbreakdown voltage. Thus, the electrical durability of the insulatinglayer 420 may be improved.

FIG. 5A illustrates a plan view showing a portion of a touch partaccording to another exemplary embodiment, FIG. 5B illustrates a planview showing a portion of a touch part according to this exemplaryembodiment, and FIG. 5C illustrates a cross-sectional view taken along aline II-II′ of FIG. 5B. In FIGS. 5A to 5C, the same reference numeralsdenote the same elements in FIGS. 1 to 4C, and thus detaileddescriptions of the same elements will not be repeated.

Referring to FIG. 5A, a first conductive layer 410-1 may be disposed onthe thin film encapsulation layer 340. The first conductive layer 410-1may include first sensing parts TP1, connection parts CP1, and secondsensing parts TP2.

The first sensing parts TP1 may be arranged in the second direction DR2and spaced apart from each other. The connection parts CP1 may bedisposed between the first sensing parts TP1. Each of the connectionparts CP1 may connect two first sensing parts adjacent to each other.The first sensing parts TP1 and the connection parts CP1 may correspondto the first touch electrodes 410 a, 410 b, 410 c, and 410 d shown inFIG. 4A.

The second sensing parts TP2 may be arranged in the first direction DR1and may be spaced apart from each other. The second sensing parts TP2may be electrically insulated from the first sensing parts TP1 and theconnection parts CP1. The second sensing parts TP2 may have a shapecorresponding to that of the second sensing parts TP2 shown in FIG. 4B.

The first conductive layer 410-1 may further include first outer wiresWP1 and second outer wires WP2. The first outer wires WP1 may beconnected to corresponding first sensing parts of the first sensingparts TP1 and the second outer wires WP2 may be connected tocorresponding second sensing parts of the second sensing parts TP2.

The first and second outer wires WP1 and WP2 may extend in a pad areaPA.

First pads PD1 may be disposed at one end of the first outer wires WP1in the pad area PA, and second pads PD2 may be disposed at one end ofthe second outer wires WP2 in the pad area PA.

Referring to FIG. 5B, an insulating layer 420-1 and a second conductivelayer 430-1 may be sequentially stacked on the first conductive layer410-1. The insulating layer 420-1 includes a plurality of insulatingpatterns.

The insulating patterns may be respectively disposed between the secondsensing parts TP2. The insulating patterns may be in an overlappingrelationship with the connection parts CP1.

The second conductive layer 430-1 may include a plurality of conductivepatterns, e.g., a plurality of bridge electrodes 430-1. The bridgeelectrodes 430-1 may be disposed on the insulating layer 420-1 and maybe respectively insulated from the connection parts CP1 whilerespectively crossing the connection parts CP1. Each of the bridgeelectrodes 430-1 may connect two second sensing parts adjacent to eachother among the second sensing parts TP2 through a thru-hole formedthrough the insulating layer 420-1 or may connect two second sensingparts among the second sensing parts TP2 along a side surface of theinsulating layer 420-1.

Referring to FIG. 5C, the insulating layer 420-1 may overlap a portionof the first conductive layer 410-1. The insulating layer 420-1 mayinclude a lower insulating layer 421-1 and an upper insulating layer422-1, which are sequentially stacked on the first conductive layer410-1. The lower and upper insulating layers 421-1 and 422-1 may includethe same material as that of the lower and upper insulating layers 421and 422 described with respect to in FIG. 4C.

In this case, the lower and upper insulating layers 421-1 and 422-1 maybe substantially simultaneously patterned. Accordingly, the lower andupper insulating layers 421-1 and 422-1 have the same shape when viewedin a plan view. Side surfaces of the lower insulating layer 421-1 may bealigned with side surfaces of the upper insulating layer 422-1.

According to another embodiment, the insulating layer 420-1 may beintegrally formed in a single unitary and individual unit to cover thefirst sensing parts TP1, the connection parts CP1, and the secondsensing parts TP2.

According to another embodiment, the upper insulating layer 422-1 mayhave an area wider than that of the lower insulating layer 421-1 whenviewed in a plan view. The upper insulating layer 422-1 may cover upperand side surfaces of the lower insulating layer 421-1, and thus thelower insulating layer 421-1 may be prevented from being damaged.

FIG. 6 illustrates a flowchart showing a method of manufacturing adisplay device according to an exemplary embodiment and FIG. 7 is aflowchart showing a portion of the manufacturing method shown in FIG. 6.Hereinafter, the manufacturing method of the display device will bedescribed in detail with reference to FIGS. 6 and 7. In FIGS. 6 and 7,the same reference numerals denote the same elements in FIGS. 1 to 5C,and thus detailed descriptions of the same elements will not berepeated.

The manufacturing method of the display device may include providing thedisplay panel (S100) and forming the touch part (S200). Forming thetouch part (S200) may include forming the first conductive layer (S210),forming the insulating layer (S220), and forming the second conductivelayer (S230).

Providing the display panel (S100) may be separately carried out from orsuccessively carried out with the forming of the touch part (S200). Forinstance, providing the display panel may include loading a manufactureddisplay panel into a vacuum chamber or may include forming the touchpart (S200) successively in the vacuum chamber after the display panelis formed in the vacuum chamber.

Various display panels are used as the display panel. For example,providing the display panel (S100) may include providing an organiclight emitting display panel. The organic light emitting display panelmay include a base substrate, an organic light emitting diode disposedon the base substrate, and a thin film encapsulation layer disposed onthe organic light emitting diode.

Forming the first conductive layer (S210) may include directly formingthe first conductive layer on the thin film encapsulation layer. Forexample, forming of first conductive layer (S210) may include forming abase layer, which includes a conductive material, on the thin filmencapsulation layer and patterning the base layer to form the conductivepatterns. Forming the first conductive layer (S210) may be carried outthrough a wet etching process using the etching solution.

The conductive patterns may have various shapes. For instance, formingthe first conductive layer (S210) may provide the first conductive layer410 shown in FIG. 4A. The conductive patterns may include the firsttouch electrodes 410 a, 410 b, 410 c, and 410 d, the outer wires WP1,and the lower pads PDD.

According to another embodiment, forming the first conductive layer(S210) may provide the first conductive layer 410-1 shown in FIG. 5A.The conductive patterns may include the first sensing parts TP1, thesecond sensing parts TP2, the connection parts CP1, the outer wires WP,and the pads PD1 and PD2. The parts included in the conductive patternsmay be substantially simultaneously formed or sequentially formed.

Forming the insulating layer (S220) may provide the insulating layerincluding silicon nitride on the first conductive layer. The insulatinglayer may have a shape appropriate to cover the entire surface of thefirst conductive layer as shown in FIG. 4B. In some implementations, theinsulating layer may be patterned to form the insulating patterns thatcover portions of the first conductive layer.

As described above, silicon nitride is the compound in which the siliconatoms are combined with the nitrogen atoms, and which further includeshydrogen atoms. The insulating layer may include silicon nitridemolecules containing hydrogen atoms in various ratios.

Forming the insulating layer (S220) may be carried out by a lowtemperature deposition process performed at a temperature equal to orlower than about 85° C. For instance, the forming of the insulatinglayer (S220) may be performed through a plasma enhanced chemical vapordeposition (PECVD) at a temperature of about 70° C. When the forming ofthe insulating layer (S220) is performed at a low temperature, theorganic light emitting diode included in the organic light emittingdisplay panel may be prevented from being damaged.

Forming of insulating layer (S220) may include forming the lowerinsulating layer (S221) and forming the upper insulating layer (S222).Forming the lower insulating layer (S221) and forming the upperinsulating layer (S222) may be carried out using different gases.

In forming the lower insulating layer (S221), a first gas may besupplied to form the lower insulating layer. The first gas may includenitrogen gas (N₂), ammonia gas (NH₃), silane gas (SiH₄), and hydrogengas (H₂). The silane gas may react with the nitrogen gas in the vacuumchamber to form silicon nitride. The silicon nitride may be deposited onthe first conductive layer to form the lower insulating layer.

The ratio of hydrogen gas in the first gas may be relatively high. Inthe present exemplary embodiment, the hydrogen gas may be provided in anamount about three times that of the silane gas in the first gas. Thehydrogen gas may exert physical influence on the lower insulating layerwhen the lower insulating layer is deposited.

For instance, due to the hydrogen gas, a dangling bond becomes stable inthe layer. In general, a dangling bond may be easily generated in aninsulating layer that is formed by a low temperature deposition process.During the low temperature deposition process, energy of the depositionmaterial may be lower than that of a deposition material formed by ahigh temperature deposition process.

Therefore, the deposition material may be deposited before a portion ofoutermost electrons of silicon atom of the silane gas have completelycombined with a hole. As a result, the dangling bonds may exist in thelayer. However, when the first gas includes hydrogen gas at a high rate,dangling bond passivation may be achieved.

In addition, the hydrogen atoms may physically collide with other atomsin the vacuum chamber. When the silicon nitride molecules are deposited,the hydrogen atoms may physically collide with the silicon nitridemolecules. The mobility of the silicon nitride molecules may be improveddue to the physical collision. The silicon nitride molecules may bephysically scattered, and thus, the silicon nitride molecules may beuniformly deposited over a comparatively large area rather than over aspecific area.

Thus, the silicon nitride molecules may be relatively densely deposited.When the lower insulating layer is formed by using the first gas,defects, e.g., voids, may be prevented from being formed in the lowerinsulating layer. Thus, the insulating layer having relatively highdensity may be formed.

As described above, the density of the layer may exert an influence onthe breakdown voltage of the layer. When the lower insulating layer hasa high density, the breakdown voltage of the lower insulating layer maybe improved. Accordingly, the insulating layer formed using the firstgas in forming the lower insulating layer (S221) may have improvedelectrical characteristics.

Forming the upper insulating layer (S222) may be carried out afterforming the lower insulating layer (S221). Forming the upper insulatinglayer (S222) may be performed using a second gas different from thefirst gas. The second gas may include silane gas (SiH₄), nitrogen gas(N₂), and hydrogen gas (H₂).

The second gas may be substantially the same as the first gas except fornot including ammonia gas. The second gas may provide a relativelysmaller ratio of hydrogen atoms than that of the first gas.

When the ammonia gas is removed or absent, a probability of couplingbetween the silane atoms and the hydrogen atoms becomes lower comparedto that in the forming of the lower insulating layer (S221).Accordingly, in forming the upper insulating layer (S222), theinsulating layer having silicon nitride molecules, in which the amountof the hydrogen atoms is relatively low, is formed. In the presentexemplary embodiment, the upper insulating layer may include about 20 at% or less of hydrogen atoms.

In addition, the second gas may include silane gas at a relatively lowerratio than that of the first gas. The amount of silane gas in the secondgas may be smaller than the amount of silane gas in the first gas.Therefore, the upper insulating layer may have a smaller thickness thanthe lower insulating layer.

In the present exemplary embodiment, the breakdown voltage of the lowerinsulating layer may be higher than the breakdown voltage of the upperinsulating layer. In forming the insulating layer (S220), the lowerinsulating layer may be formed to have a thickness greater than that ofthe upper insulating layer. Electrical durability of the insulatinglayer may be improved.

Forming of second conductive layer (S230) may be performed after formingthe upper insulating layer (S222). For example, Forming the secondconductive layer (S230) may include forming a base layer containing theconductive material on the upper insulating layer and patterning thebase layer to form the conductive patterns.

The conductive patterns may be the conductive patterns 430 shown in FIG.4B. In this case, forming the second conductive layer (S230) may includeforming the second touch electrodes 430 a, 430 b, and 430 c, the outerwires WP2, and the pads PD1 and PD2.

In other implementations, the conductive patterns may be the conductivepatterns shown in FIG. 5B. In this case, the forming of the secondconductive layer (S230) may include forming the bridge electrodes CP2.The parts included in the conductive patterns may be substantiallysimultaneously formed by patterning the base layer or sequentiallypatterned.

Forming the second conductive layer (S230) may be carried out by a wetetching process using an etching solution. In the present exemplaryembodiment, the second conductive layer may include copper. Accordingly,the etching solution may include a material having a high reactivity tocopper.

The etching solution used in the forming of the second conductive layer(S230) may contact the insulating layer exposed when the base layer ispatterned. In general, the etching solution may have a high reactivityto the silicon nitride layer formed by the low temperature depositionprocess. The silicon nitride layer formed by the low temperaturedeposition process may be at risk for being easily damaged in theforming of the second conductive layer (S230).

The insulating layer according to the present exemplary embodiment hasthe double-layer structure in which the upper insulating layer coversthe lower insulating layer. As described above, the upper insulatinglayer may include about 20 at % or less of the hydrogen atoms. Thus, theetching rate of the upper insulating layer may be only about 3 Å/s withrespect to the etching solution.

The display device according to the present exemplary embodiment mayinclude the upper insulating layer. The insulating layer may beprevented from being damaged from the etching solution used in theforming of the second conductive layer (S230). According to themanufacturing method of the display device, the insulating layer may beformed by the low temperature deposition process. The display device mayhave improved reliability.

The lower insulating layer may have a high breakdown voltage and may becovered by the upper insulating layer having a low etching rate.Accordingly, the electrical and physical durability of the displaydevice may be improved. The reliability of the display device may beimproved, a yield of the display device may be increased, and thereliability in use of the display device may be improved.

By way of summation and review, a touch part of a display device may bedirectly disposed on the display part. In this case, it is desirablethat processes of forming the touch part be performed under anenvironment such as to prevent the display part from being damaged.

Embodiments provide a display device including a touch part directlydisposed on a display part and having improved durability and electricalproperty.

Embodiments provide a method of manufacturing the display device that iscapable of preventing an insulating layer from being damaged under a lowtemperature environment.

According to embodiments, the display device manufactured by themanufacturing method includes the display part and the touch part. Thetouch part includes the first and second conductive layers sequentiallystacked and the insulating layer disposed between the first and secondconductive layers and configured to include two layers. The insulatinglayer includes the lower layer and the upper layer having the hydrogenatomic percent lower than that of the lower layer.

Since the upper layer has the low hydrogen atomic percent, thereactivity of the upper layer becomes lower with respect to the etchingsolution, and thus the etching rate of the upper layer is decreased.Therefore, the stability of the insulating layer against the etchingsolution used in the forming of the second conductive layer is improved,so that physical durability and yield of the display device areimproved.

In addition, since the lower layer has a density higher than that of theupper layer, the lower layer has the high breakdown voltage. Thus,although the manufacturing method of the display device is performed atthe low temperature, electrical durability of the display device isincreased, and thus reliability in use of the display device isimproved.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of ordinary skill in the art asof the filing of the present application, features, characteristics,and/or elements described in connection with a particular embodiment maybe used singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwisespecifically indicated. Accordingly, it will be understood by those ofskill in the art that various changes in form and details may be madewithout departing from the spirit and scope thereof as set forth in thefollowing claims.

What is claimed is:
 1. A display device, comprising: a display partconfigured to display an image; and a touch part on the display part,the touch part comprising: a first conductive layer on the display part;a second conductive layer on the first conductive layer; and aninorganic layer between the first conductive layer and the secondconductive layer, wherein the inorganic layer comprises: a first partadjacent to the first conductive layer; and a second part closer to thesecond conductive layer than the first part, and wherein the second partcomprises a same material as the first part, a density of the samematerial being relatively higher in the first part than the second part.2. The display device of claim 1, wherein a hydrogen atomic percent ofthe second part is less than a hydrogen atomic percent of the firstpart.
 3. The display device of claim 2, wherein the hydrogen atomicpercent of the second part is greater than 0 and less than or equal toabout
 20. 4. The display device of claim 3, wherein: the inorganic layercomprises silicon nitride; and the second conductive layer comprisescopper.
 5. The display device of claim 2, wherein a breakdown voltage ofthe first part is greater than or equal to about 5 MV/cm.
 6. The displaydevice of claim 5, wherein a thickness of the first part is greater thana thickness of the second part.
 7. The display device of claim 1,wherein: the display part comprises: a base substrate; an organic lightemitting diode on the base substrate; and a thin film encapsulationlayer on the base substrate, the thin film encapsulation layer coveringthe organic light emitting diode and comprising an inorganic material;and the first conductive layer is directly on the thin filmencapsulation layer.
 8. The display device of claim 7, wherein: thefirst conductive layer comprises first touch electrodes on the thin filmencapsulation layer, the first touch electrodes extending in a firstdirection and being arranged in a second direction crossing the firstdirection; and the second conductive layer comprises second touchelectrodes respectively crossing the first touch electrodes and beinginsulated from the first touch electrodes by the second part and thefirst part.
 9. The display device of claim 8, wherein: each of the firsttouch electrodes comprises: first sensing parts arranged in the firstdirection and spaced apart from each other; and first connection parts,each of the first connection parts being between adjacent first sensingparts among the first sensing parts to connect the adjacent firstsensing parts to each other; and each of the second touch electrodescomprises: second sensing parts arranged in the second direction andspaced apart from each other; and second connection parts, each of thesecond connection parts being between adjacent second sensing partsamong the second sensing parts to connect the adjacent second sensingparts to each other.
 10. The display device of claim 7, wherein: thefirst conductive layer comprises: first sensing parts on the thin filmencapsulation layer, the first sensing parts being arranged in a firstdirection and spaced apart from each other; connection parts on the thinfilm encapsulation layer and extending in the first direction, eachconnection part connecting adjacent first sensing parts to each otheramong the first sensing parts; and second sensing parts on the thin filmencapsulation layer, the second sensing parts being arranged in a seconddirection crossing the first direction, spaced apart from each other,and insulated from the first sensing parts and the connection parts; thesecond conductive layer comprises bridge electrodes on the second partand the first part; and each of the bridge electrodes connects adjacentsecond sensing parts to each other among the second sensing partsthrough a thru-hole in the second part and the first part.
 11. Thedisplay device of claim 1, wherein: the first part contacts the firstconductive layer; and the second part contacts the second conductivelayer.
 12. A display device, comprising: a display part configured todisplay an image; a touch part on the display part, the touch partcomprising: a first conductive layer on the display part; a secondconductive layer on the first conductive layer; and an inorganic layerbetween the first conductive layer and the second conductive layer, theinorganic layer comprising a first part and a second part that comprisea same material as each other, wherein the first conductive layercomprises: first sensing parts arranged in a first direction and spacedapart from each other; first connection parts, each of the firstconnection parts being between adjacent first sensing parts among thefirst sensing parts to connect the adjacent first sensing parts to eachother; and second sensing parts arranged in a second direction crossingthe first direction, the second sensing parts being spaced apart fromeach other and insulated from the first sensing parts, wherein thesecond conductive layer comprises second connection parts on the secondpart, each of the second connection parts being between adjacent secondsensing parts among the second sensing parts to connect the adjacentsecond sensing parts to each other, and wherein sides of each of thefirst part and the second part are aligned with each other and expose aportion of the first conductive layer.
 13. The display device of claim12, wherein a density of the same material is relatively higher in thefirst part than the second part.
 14. The display device of claim 12,wherein a hydrogen atomic percent of the second part is less than ahydrogen atomic percent of the first part.
 15. The display device ofclaim 14, wherein the hydrogen atomic percent of the second part isgreater than 0 and less than or equal to about
 20. 16. The displaydevice of claim 15, wherein: the inorganic layer comprises siliconnitride; and the second conductive layer comprises copper.
 17. Thedisplay device of claim 12, wherein a breakdown voltage of the firstpart is greater than or equal to about 5 MV/cm.
 18. The display deviceof claim 17, wherein a thickness of the first part is greater than athickness of the second part.